Ushbu ishga iqtibos qilgan ishlar

10 ta ish

Ish: The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

1. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos

   ABIABI:AkademIndex/2025.article.001352

2. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos

   ABIABI:AkademIndex/2025.article.001173

3. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos

   ABIABI:AkademIndex/2026.article.000556

4. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos

   ABIABI:AkademIndex/2026.article.003469

5. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos

   ABIABI:AkademIndex/2026.article.002954

6. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

   J. Sh. Abdullayev, I.B. Sapaev

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.038544

7. Self-Consistent Fowler–Nordheim Tunneling Modeling in Si/GaAs Heterostructures with Optimized Nanoscale Meshing

   Jo`shqin Abdullayev, L.K. Babajanov, N.P. Babayazova +3

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043868

8. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

   M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043892

9. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

   D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043976

10. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

    MaqolaOAOchiq kirish20260 iqtibos

    ABIABI:AkademIndex/2026.article.043990