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32 ta ish

Ish: A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202417 iqtibos
    ABI

  3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202415 iqtibos
    ABI

  4. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos
    ABI

  5. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos
    ABI

  6. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  7. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology202411 iqtibos
    ABI

  8. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos
    ABI

  9. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  10. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  11. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Maqola20249 iqtibos
    ABI

  12. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos
    ABI

  13. Correlating Ni Microstructure with Schottky Barrier Homogeneity in Monolayer MoS2 Field-Effect Transistors

    Maqola20257 iqtibos
    ABI

  14. Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior

    I. B. Sapaev, Jamoliddin I. Razzokov, Jo`shqin Abdullayev +2

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20255 iqtibos
    ABI

  15. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos
    ABI

  16. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos
    ABI

  17. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20264 iqtibos
    ABI

  18. Modeling of Thermal Effects in a Polyimide Target Under Pulsed Laser Irradiation

    J.O. Sadullayev, M.M. Akhmedov, M.E. Vapayev +2

    MaqolaOchiq kirishLaser Material Processing TechniquesEast European Journal of Physics20264 iqtibos
    ABI

  19. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20264 iqtibos
    ABI

  20. Germanium: A review of its US demand, uses, resources, chemistry, and separation technologies

    Madhav Patel, Athanasios K. Karamalidis

    Sharh maqola20214 iqtibos
    ABI

  21. Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20253 iqtibos
    ABI

  22. The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP

    C. D. Thurmond

    Maqola19753 iqtibos
    ABI

  23. Sarlavhasiz

    Boshqa3 iqtibos
    ABI

  24. Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3

    MaqolaOchiq kirishIon-surface interactions and analysisEast European Journal of Physics20252 iqtibos
    ABI

  25. Sarlavhasiz

    Boshqa2 iqtibos
    ABI