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Xizmatlar

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Ushbu ishga iqtibos qilgan ishlar

14 ta ish

Ish: Heterojunctions and Metal Semiconductor Junctions

  1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    MaqolaMetal and Thin Film MechanicsTechnical Physics201315 iqtibos
    ABI

  2. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201212 iqtibos
    ABI

  3. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    MaqolaChalcogenide Semiconductor Thin FilmsInorganic Materials202011 iqtibos
    ABI

  4. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    MaqolaThermography and Photoacoustic TechniquesInorganic Materials201410 iqtibos
    ABI

  5. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State200710 iqtibos
    ABI

  6. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesPhysics of the Solid State20158 iqtibos
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 iqtibos
    ABI

  8. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20144 iqtibos
    ABI

  9. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 iqtibos
    ABI

  10. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20083 iqtibos
    ABI

  11. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 iqtibos
    ABI

  12. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

    Б. Сапаев, A.S. Saidov, S. Dadamukhamedov

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics20041 iqtibos
    ABI

  13. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, A.S. Saidov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors20041 iqtibos
    ABI

  14. Injection of degenerate electron-hole plasma

    Yu. A. Katulevskii

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19850 iqtibos
    ABI