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25 ta ish

Ish: Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI

  2. The physics of semiconductor devices

    H. L. Grubin

    Maqola197918 iqtibos
    ABI

  3. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaOchiq kirishQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  4. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  5. ZnS nanostructures: From synthesis to applications

    Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam +4

    Maqola20103 iqtibos
    ABI

  6. GaP-nucleation on exact Si (001) substrates for III/V device integration

    Kerstin Volz, Andreas Beyer, Wiebke Witte +4

    Maqola20103 iqtibos
    ABI

  7. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20162 iqtibos
    ABI

  8. Electron energies and states at the deep impurity level in a semiconductor

    A. G. Mironov, Alexander S. Serov

    Maqola20112 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20131 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
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  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

    D. V. Saparov, М. С. Саидов, A.S. Saidov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20161 iqtibos
    ABI

  23. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  24. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  25. Sarlavhasiz

    Boshqa1 iqtibos
    ABI