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25 ta ish

Ish: Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

  1. Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

    I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12

    Maqola20088 iqtibos
    ABI

  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
    ABI

  3. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  4. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  5. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI

  6. Oxidation kinetics of hot-pressed silicon carbide

    Subhash C. Singhal

    Maqola19764 iqtibos
    ABI

  7. A new approach in impurity doping of 4H-SiC using silicidation

    Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2

    Maqola20134 iqtibos
    ABI

  8. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa3 iqtibos
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  10. Shallow acceptor levels in 4H- and 6H-SiC

    S. R. Smith, A. O. Evwaraye, W. C. Mitchel +1

    Maqola19992 iqtibos
    ABI

  11. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos
    ABI

  12. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 iqtibos
    ABI

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    Boshqa1 iqtibos
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