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Ish: The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

1. The rate of surface generation of charge carriers at the semiconductor-glass interface

   С. И. Власов, A. V. Ovsyannikov

   MaqolaSurface Roughness and Optical MeasurementsSurface Engineering and Applied Electrochemistry20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000317