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13 ta ish

Ish: Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

  1. Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

    M. K. Herndon, Anju Gupta, V. Kaydanov +1

    Maqola199916 iqtibos
    ABI

  2. Double-injection currents in semiconductors

    É. I. Adirovich, P. M. Karageorgii-Alkalaev, A. Iu. Leiderman

    Maqola197814 iqtibos
    ABI

  3. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  4. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Maqola197812 iqtibos
    ABI

  5. Optical Energy Gap of the Mixed Crystal CdS<sub><i>x</i></sub>Te<sub>1-<i>x</i></sub>

    Keiichi Ohata, Junji Saraie, Tetsuro Tanaka

    Maqola197310 iqtibos
    ABI

  6. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20108 iqtibos
    ABI

  8. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  9. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  10. FUNDAMENTAL AND APPLIED PROBLEMS OF PHYSICS

    В. Г. Халтурин

    Maqola20067 iqtibos
    ABI

  11. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19766 iqtibos
    ABI

  12. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 iqtibos
    ABI

  13. Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

    A.S. Saidov, A. Yu. Leĭderman, Б. Сапаев +2

    Maqola19962 iqtibos
    ABI