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42 ta ish

Ish: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

  1. Sarlavhasiz

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  4. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20071 iqtibos
    ABI

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  10. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, A.S. Saidov, B. N. Zaveryukhin

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20041 iqtibos
    ABI

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  12. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

    Б. Сапаев

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20041 iqtibos
    ABI

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  14. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

    Б. Сапаев, A.S. Saidov, S. Dadamukhamedov

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics20041 iqtibos
    ABI

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  16. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    MaqolaSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 iqtibos
    ABI

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