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9 ta ish

Ish: Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

  1. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  2. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
    ABI

  3. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
    ABI

  4. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    MaqolaSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 iqtibos
    ABI

  5. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20253 iqtibos
    ABI

  6. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    MaqolaChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 iqtibos
    ABI

  7. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20260 iqtibos
    ABI

  8. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20260 iqtibos
    ABI

  9. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20260 iqtibos
    ABI