Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

9 ta ish

Ish: Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 iqtibos
    ABI

  2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  3. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesPhysics of the Solid State20158 iqtibos
    ABI

  4. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaPhase-change materials and chalcogenidesApplied Solar Energy20198 iqtibos
    ABI

  5. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  6. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesInorganic Materials20145 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI