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Ish: Effect of GaSb Compound on Silicon Bandgap Energy

1. Transport properties of silicon doped with manganese via low-temperature diffusion

   М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

   MaqolaSilicon and Solar Cell TechnologiesInorganic Materials201124 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.229086

2. Self-organization of nickel atoms in silicon

   М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +3

   MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials201110 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.184728

3. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

   М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

   MaqolaInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.345482

4. Specific features of magnetoresistance in overcompensated manganese-doped silicon

   M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

   MaqolaMagnetic Properties and ApplicationsSemiconductors20147 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.319032

5. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

   Yogesh Goswami, Pranav Kumar Asthana, Bahniman Ghosh

   Maqola20173 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.381579

6. Impurity photovoltaic effect in silicon with multicharge Mn clusters

   М. К. Бахадырханов, Х. М. Илиев, С. А. Тачилин +2

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20082 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000109

7. High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

   Pranav Kumar Asthana

   Maqola20152 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.381573

8. Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector

   H. J. Lee, Sung Yong Ko, Y. H. Kim +1

   Maqola20202 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.381581

9. Wet etching and passivation of GaSb-based very long wavelength infrared detectors

   Xue-Yue Xu, Junkai Jiang, Wei‐Qiang Chen +10

   Maqola20222 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.381582

10. Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

    Jiafeng Liu, He Zhu, Hong Zhu +4

    Maqola20222 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.381583

11. X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

    Jean‐Baptiste Rodriguez, K. Madiomanana, L. Cerutti +2

    Maqola20162 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.385138

12. Beyond the Vegard's law: solid mixing excess volume and thermodynamic potentials prediction, from end-members

    Marcellο Merli, Alessandrο Pavese

    Maqola20192 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.550828

13. Control of the magnetic properties of silicon with manganese atom nanoclusters

    М. К. Бахадырханов, Г. Х. Мавлонов, Х. М. Илиев

    MaqolaMagnetic Field Sensors TechniquesTechnical Physics20142 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.559846

14. High-efficiency GaSb photocells

    В. П. Хвостиков, S. V. Sorokina, О. А. Хвостикова +5

    Maqola20132 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.559850

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    ABIABI:AkademIndex/openalex/2026.other.559845

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    ABIABI:AkademIndex/openalex/2026.other.559847

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    ABIABI:AkademIndex/openalex/2026.other.559848

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    ABIABI:AkademIndex/openalex/2026.other.559849

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    ABIABI:AkademIndex/openalex/2026.other.559851

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    ABIABI:AkademIndex/openalex/2026.other.559853

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    ABIABI:AkademIndex/openalex/2026.other.559854

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    ABIABI:AkademIndex/openalex/2026.other.559855

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    ABIABI:AkademIndex/openalex/2026.other.559856

25. Sarlavhasiz

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    ABIABI:AkademIndex/openalex/2026.other.559857