Ushbu ish iqtibos qilgan ishlar

27 ta ish

Ish: Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.000600

2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

   Jo`shqin Abdullayev, I. B. Sapaev

   Maqola202413 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.261553

3. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics202410 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.000837

4. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

   I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

   MaqolaChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000847

5. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20249 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.000836

6. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

   Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

   MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000546

7. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000607

8. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

   Jo`shqin Abdullayev

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000647

9. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

   MaqolaAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001003

10. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos

    ABIABI:AkademIndex/openalex/2025.article.000840

11. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos

    ABIABI:AkademIndex/openalex/2025.article.000841

12. Distribution of impurities in base-depleted region of diode temperature sensor

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    MaqolaChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 iqtibos

    ABIABI:AkademIndex/openalex/2024.article.002075

13. Heterointegration of Pt/Si/Ag Nanowire Photodiodes and Their Photocatalytic Properties

    Yongquan Qu, Xue Teng, Xing Zhong +4

    Maqola20102 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.268481

14. Photonic Nanowires: From Subwavelength Waveguides to Optical Sensors

    Xin Guo, Yibin Ying, Limin Tong

    Maqola20132 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.268483

15. Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode

    Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello

    Maqola20242 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.335610

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    ABIABI:AkademIndex/openalex/2026.other.830345

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