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10 ta ish

Ish: Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

  1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201415 iqtibos
    ABI

  2. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos
    ABI

  3. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

    Maqola20046 iqtibos
    ABI

  4. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos
    ABI

  5. Special Applications

    S. P. Murarka

    Bob19833 iqtibos
    ABI

  6. Implantation of sodium ions into germanium

    V.M. Korol, Yu. Kudriavtsev

    Maqola20123 iqtibos
    ABI

  7. Synthesis and applications of metal silicidenanowires

    Andrew L. Schmitt, Jeremy M. Higgins, Jeannine R. Szczech +1

    Maqola20093 iqtibos
    ABI

  8. The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

    Christopher A. Nolph, E. Vescovo, Petra Reinke

    Maqola20093 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI