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Ish: Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

Injection photodiode based on an n-CdS/p-CdTe heterostructure
Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov
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ABI
Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов
MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 iqtibos
ABI
I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1
MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
ABI
Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure
Ш. А. Мирсагатов, I. B. Sapaev
MaqolaSemiconductor materials and interfacesPhysics of the Solid State20158 iqtibos
ABI
Characterization of CdTe thin films with different compositions obtained by CMBD for thin film solar cells
T.M. Razykov, К. M. Kuchkarov, Chris Ferekides +4
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ABI
Injection photodiode based on a p-Si-n-CdS-n +-CdS structure
Ш. А. Мирсагатов, I. B. Sapayev
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ABI
Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells
Andrei Salavei, I. Rimmaudo, Fabio Piccinelli +1
Maqola20123 iqtibos
ABI
High-performance ultraviolet photodetectors based on CdS/CdS:SnS<sub>2</sub>superlattice nanowires
Guangyang Gou, Guozhang Dai, Chuan Qian +8
Maqola20162 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI