Ushbu ishga iqtibos qilgan ishlar

8 ta ish

Ish: Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.279528

2. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.410284

3. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   MaqolaSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000971

4. Study of the Mobility and Electrical Conductivity of Chromium Silicide

   M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20233 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001424

5. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   MaqolaAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.001560

6. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   MaqolaGas Sensing Nanomaterials and SensorsEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002166

7. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   MaqolaSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.585531

8. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003369