Ushbu ish iqtibos qilgan ishlar

7 ta ish

Ish: On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.079735

3. Electronic properties of semiconducting silicides: fundamentals and recent predictions

   L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

   Maqola20046 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.199255

4. Precipitates of MnSi cubic phase in tetragonal Mn4Si7 crystal

   Elena I. Suvorova, V. V. Klechkovskaya

   Maqola20133 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.527235

5. Physicochemical interaction at the MnSi1.71–1.75/Mo interface

   Л. И. Петрова, M. I. Fedorov, V. K. Zaĭtsev +1

   Maqola20132 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.527237

6. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.553964

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.553963