Ushbu ishga iqtibos qilgan ishlar

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Ish: Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

1. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.000827

2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   MaqolaSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.511885