Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Metal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers

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   ABIABI:AkademIndex/openalex/2008.article.000326

2. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

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   ABIABI:AkademIndex/openalex/2010.article.000173