Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: First-principles study of radiation defects in silicon

1. Investigations of the formation of nanosized objects in manganese implanted silicon single crystals by the methods of Raman scattering of light and atomic force microscopy

   E.U. Arzikulov, F. Salakhitdinov, F Kholmurodov +1

   MaqolaIon-surface interactions and analysisJournal of Physics Conference Series20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.010504

2. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.009030

3. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   MaqolaSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010369