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Ish: Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance

1. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

   M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

   MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.009026

2. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.preprint.001199