Article

Bias current in semiconductors during overcharging of impurity centres

B. B. BaizakovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentR. A. MoominovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentS. H. ShamirzaievS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentA.Ya. YafasovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

physica status solidi (a)journal1981en

ABI

Abstract

No abstract available.

Topics

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices

Identifiers

DOI: 10.1002/pssa.2210670148

Citations and references

Cited by 03 references

Metrics — AkademScholar · Coming soon