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Works cited by this work

9 works

Work: Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Article20109 citations
    ABI

  2. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20165 citations
    ABI

  3. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20174 citations
    ABI

  4. Sizes of X-ray radiation coherent domains in thin SmS films and their visualization

    Н. В. Шаренкова, В. В. Каминский, С. Н. Петров

    Article20114 citations
    ABI

  5. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

    Article20094 citations
    ABI

  6. Low-temperature crystallization of semiconductor solid solutions that are promising for the realization of the extrinsic thermophotovoltaic effect

    М. С. Саидов

    ArticleAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20072 citations
    ABI

  7. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    Artur Medvid, Pāvels Onufrijevs, Renata Jarimaviciute-Gudaitiene +2

    Article20132 citations
    ABI

  8. Untitled

    Other1 citations
    ABI

  9. Untitled

    Other1 citations
    ABI