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6 works

Work: X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

  1. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 citations
    ABI

  2. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 citations
    ABI

  3. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    ArticleMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 citations
    ABI

  4. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 citations
    ABI

  5. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 citations
    ABI

  6. Thermal stability parameters of silicon doped with nickel impurity atoms

    B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

    ArticleThermal properties of materialsAIP conference proceedings20250 citations
    ABI