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Works cited by this work

18 works

Work: Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

  1. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    ArticleAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 citations
    ABI

  2. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Article199810 citations
    ABI

  3. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 citations
    ABI

  4. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Article19749 citations
    ABI

  5. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20238 citations
    ABI

  6. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    ArticleAdvanced Semiconductor Detectors and MaterialsApplied Physics20218 citations
    ABI

  7. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20018 citations
    ABI

  8. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 citations
    ABI

  9. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 citations
    ABI

  10. Silicon clusters doped with an yttrium metal atom impurity

    Chuanyun Xiao, Jessica Blundell, Frank Hagelberg +1

    Article20034 citations
    ABI

  11. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    ArticleSilicon and Solar Cell TechnologiesModern Physics Letters B19974 citations
    ABI

  12. Comparison of Infrared and Activation Analysis Results in Determining the Oxygen and Carbon Content in Silicon

    C. Gross, Gianni Gaetano, T. N. Tucker +1

    Article19722 citations
    ABI

  13. Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

    О. В. Александров, A. O. Zakhar’in, Н. А. Соболев +1

    Article20022 citations
    ABI

  14. Thermophysical spectroscopy of the defective states in silicon

    Kh. T. Igamberdyev, A. T. Mamadalimov, P. K. Khabibullaev

    ArticleSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics19891 citations
    ABI

  15. Untitled

    Other1 citations
    ABI

  16. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20001 citations
    ABI

  17. Untitled

    Other1 citations
    ABI

  18. Untitled

    Other1 citations
    ABI