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Works cited by this work

36 works

Work: Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 citations
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Article202413 citations
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Article201211 citations
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Article201611 citations
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleSemiconductor materials and interfacesEast European Journal of Physics202410 citations
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Article201310 citations
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Article201910 citations
    ABI

  8. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 citations
    ABI

  9. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    ArticleSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 citations
    ABI

  10. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Article20119 citations
    ABI

  11. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Article20119 citations
    ABI

  12. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Article20159 citations
    ABI

  13. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  14. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  15. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Article20157 citations
    ABI

  16. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    ArticleAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 citations
    ABI

  17. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    Article20156 citations
    ABI

  18. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Article20196 citations
    ABI

  19. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Article20216 citations
    ABI

  20. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Article20246 citations
    ABI

  21. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  22. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  23. Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene

    Olumide Oluwole Akinwunmi, Gabriel O. Egharevba, E.O.B. Ajayi

    Article20144 citations
    ABI

  24. Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction

    Neelima Deshmukh, Tejashree Bhave, Anita Sagadevan Ethiraj +4

    Article20014 citations
    ABI

  25. Optoelectronic characterization of ZnS/PS systems

    王彩凤 Caifeng Wang, 李清山 Qingshan Li, 胡波 Bo Hu

    Article20093 citations
    ABI