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Works cited by this work

16 works

Work: Thermal stability parameters of silicon doped with nickel impurity atoms

  1. Nickel: A very fast diffuser in silicon

    Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

    Article201317 citations
    ABI

  2. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 citations
    ABI

  3. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    Article20209 citations
    ABI

  4. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    ArticleMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 citations
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 citations
    ABI

  6. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    ArticleSemiconductor materials and interfacesInorganic Materials20125 citations
    ABI

  7. Development of an educational simulator’s working logic for the course “fundamentals of power supply”

    Mirkomil Melikuziev, Zarina Fayzrakhmanova, Anvar Akhmedov +1

    ArticleEngineering and Agricultural InnovationsAIP conference proceedings20245 citations
    ABI

  8. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Article20215 citations
    ABI

  9. Issues of the design procedure for the power supply system

    Mirkomil Melikuziev, Saidbek Usmonaliev, Nodirbek Khudoyberdiev +2

    ArticleEngineering and Agricultural InnovationsAIP conference proceedings20244 citations
    ABI

  10. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20234 citations
    ABI

  11. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    ArticleSemiconductor materials and interfacesPhysical Sciences and Technology20243 citations
    ABI

  12. X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

    О. Ф. Вывенко, Tonio Buonassisi, A. A. Istratov +4

    Article20023 citations
    ABI

  13. Effect of ultrasound treatment on the electro-physical properties of the structure of Al-Al2O3-p-CdTe

    A.K. Uteniazov

    Article20193 citations
    ABI

  14. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    Article20243 citations
    ABI

  15. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    ArticleSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 citations
    ABI

  16. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 citations
    ABI