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Works cited by this work

27 works

Work: The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors201319 citations
    ABI

  2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  3. CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

    Michael A. Scarpulla, Brian E. McCandless, Adam B. Phillips +22

    Article20239 citations
    ABI

  4. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20108 citations
    ABI

  5. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Article19788 citations
    ABI

  6. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    ArticleChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 citations
    ABI

  7. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    ArticleChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 citations
    ABI

  8. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 citations
    ABI

  9. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20143 citations
    ABI

  10. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 citations
    ABI

  11. Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode

    Wei Wang, Ting Chen, Linshu Yan +6

    Article20182 citations
    ABI

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