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Works cited by this work

15 works

Work: Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    ArticleSemiconductor materials and interfacesMaterials Science and Engineering B200314 citations
    ABI

  3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  4. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  5. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Article20119 citations
    ABI

  6. Photoelectron Si 2p spectra of ultrathin CoSi2 layers formed on Si(100)2×1

    M. V. Gomoyunova, I. I. Pronin, N. R. Gall +2

    Article20039 citations
    ABI

  7. Laser Recrystallization and 3D Integration

    J.-P. Colinge

    Article19846 citations
    ABI

  8. Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

    Ki-jeong Kim, Tai‐Hee Kang, Kwang-woo Kim +2

    Article20005 citations
    ABI

  9. Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

    Ulrich Starke, J. Schardt, W. Weiß +3

    Article19984 citations
    ABI

  10. Si based optoelectronics for communications

    G. Masini, Lorenzo Colace, Gaetano Assanto

    Article20023 citations
    ABI

  11. Will silicon be the photonic material of the third millenium? *

    Lorenzo Pavesi

    Article20033 citations
    ABI

  12. Interface structure of ultrathin CoSi2 films epitaxially grown on Si(111)

    A. Seubert, J. Schardt, W. Weiß +3

    Article20002 citations
    ABI

  13. Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures

    Yu. B. Bolkhovityanov, A. S. Deryabin, А. К. Гутаковский +1

    Article20172 citations
    ABI

  14. Untitled

    Other1 citations
    ABI

  15. Untitled

    Other1 citations
    ABI