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6 works

Work: Electronic properties of semiconducting silicides: fundamentals and recent predictions

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  2. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  3. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 citations
    ABI

  4. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 citations
    ABI

  5. Structure and Thermoelectric Properties of β-FeSi2 Doped with Cobalt

    F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  6. Structure and thermoelectric properties of β-FeSi<sub>2</sub> doped with cobalt

    F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

    ArticleSemiconductor materials and interfacesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI