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Works citing this work

14 works

Work: Heterojunctions and Metal Semiconductor Junctions

  1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    ArticleMetal and Thin Film MechanicsTechnical Physics201315 citations
    ABI

  2. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 citations
    ABI

  3. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State200710 citations
    ABI

  4. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    ArticleThermography and Photoacoustic TechniquesInorganic Materials20149 citations
    ABI

  5. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    ArticleSemiconductor materials and interfacesPhysics of the Solid State20158 citations
    ABI

  6. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    ArticleChalcogenide Semiconductor Thin FilmsInorganic Materials20208 citations
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 citations
    ABI

  8. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20144 citations
    ABI

  9. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 citations
    ABI

  10. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20083 citations
    ABI

  11. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    ArticleAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 citations
    ABI

  12. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

    Б. Сапаев, А. С. Саидов, S. Dadamukhamedov

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics20041 citations
    ABI

  13. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, А. С. Саидов +1

    ArticleMaterial Science and ThermodynamicsSemiconductors20041 citations
    ABI

  14. Injection of degenerate electron-hole plasma

    Yu. A. Katulevskii

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19850 citations
    ABI