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Works cited by this work

18 works

Work: Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    ArticleSilicon and Solar Cell TechnologiesInorganic Materials201124 citations
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    ArticleQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 citations
    ABI

  3. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleSemiconductor materials and interfacesSemiconductors20218 citations
    ABI

  4. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 citations
    ABI

  5. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19947 citations
    ABI

  6. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 citations
    ABI

  7. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleOptical and Acousto-Optic TechnologiesApplied Solar Energy20125 citations
    ABI

  8. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    ArticleSemiconductor materials and interfacesSemiconductors19994 citations
    ABI

  9. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Article19983 citations
    ABI

  10. Temperature-electrical domains moving in the cathode-anode direction in CdS monocrystals

    K. Germanova

    Article19732 citations
    ABI

  11. OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS

    N. Holonyak, S. F. Bevacqua

    Article19632 citations
    ABI

  12. A Mössbauer study of a two-electron acceptor impurity of zinc in silicon

    Ф. С. Насрединов, N. P. Seregin, П. П. Серегин +1

    Article20002 citations
    ABI

  13. Generation-recombination instabilities in thin-film structures

    V. V. Kolobaev

    Article19992 citations
    ABI

  14. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  15. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20151 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

  18. Untitled

    Other1 citations
    ABI