V. A. Soloviev

Работ: 2

Russian Academy of Sciences

1. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.381992

2. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000201