K. D. Mynbaev

Работ: 3

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000163

2. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   СтатьяSemiconductor materials and devicesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000245

3. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000114