Н. К. Полетаев

Работ: 2

Russian Academy of Sciences

1. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000201

2. The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

   М. М. Мездрогина, E. Yu. Danilevskii, Roman Kuzmin +6

   СтатьяZnO doping and propertiesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000126