N. A. Matchanov

Работ: 29

Starodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan

1. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000173

2. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000362

3. Output parameters for thermoelectric modules based on metal/Last(T) hot side contacts. Part II

   N. A. Matchanov, Muhammad Farhan, Jonathan D’Angelo +5

   СтатьяAdvanced Thermoelectric Materials and DevicesApplied Solar Energy2012Цитирований: 0

   ABIABI:AkademIndex/openalex/2012.article.000353

4. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

   N. A. Matchanov, K. A. Bobojonov

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.010466