Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

Semiconductor Lasers and Optical Devices

Работ: 110

  1. Effect of laser processing on gallium arsenide device structures

    S.E. Bekbergenov

    СтатьяSemiconductor Quantum Structures and Devices2004Цитирований: 0
    ABI

  2. IR-radiating diodes made of GaAs by liquid-phase epitaxy and gas-phase Zn doping

    А. Кутлимратов

    СтатьяSemiconductor Quantum Structures and Devices2004Цитирований: 0
    ABI

  3. Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere

    M. Akhmedova, А. В. Смирнов

    СтатьяSemiconductor Quantum Structures and Devices2005Цитирований: 0
    ABI

  4. Stable Optoelectronic Devices Based on Injection-Voltaic and Photo-Voltaic Effects

    У.Х. АРИПОВА, Kh. Kh. Bustanov, F.R. Nasirkhodjaev +1

    СтатьяSemiconductor Lasers and Optical Devices2006Цитирований: 0
    ABI

  5. Computer Simulation of a Laser with Mode-Locking and Nonlinear Negative Feedback on GaAs Crystal

    С. А. Бахрамов, Sh. Payziyev, A. K. Kasimov +1

    СтатьяSemiconductor Lasers and Optical Devices2006Цитирований: 0
    ABI

  6. About physical processes in elements of a network of telecommunication on the basis of photon technologies

    R.I. Isaev, Viktoriya Frolova

    СтатьяSemiconductor Lasers and Optical Devices2006Цитирований: 0
    ABI

  7. Optic-Electrical Switches on the Basis of Modernized Multifunctional Photodiode Structures

    Kh. K. Aripov, D. M. Yodgorova, Артур Каримов +2

    СтатьяOptical and Acousto-Optic Technologies2006Цитирований: 0
    ABI

  8. The Semi-Conductor Optical Switch on a Base of Field Transistor

    Kh. K. Aripov, D. M. Yodgorova, Артур Каримов +2

    СтатьяSensor Technology and Measurement Systems2006Цитирований: 0
    ABI

  9. Peculiarities of spectral characteristics of IR-light emitting diodes obtained by the liquid phase epitaxy

    А. Кутлимратов, A.Sh. Davletova

    СтатьяSemiconductor Lasers and Optical Devices2006Цитирований: 0
    ABI

  10. Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier

    Nigmatulla Yunusov, R.K. Atametov, Sh.N. Yuldasheva

    СтатьяSemiconductor Lasers and Optical Devices2007Цитирований: 0
    ABI

  11. Design of functional nodes for telecommunication devices based on Photo- Voltaic and Injection-Voltaic Effects.

    Kh. K. Aripov, Kh. Kh. Bustanov, E. V. Ob’edkov +1

    СтатьяSemiconductor Lasers and Optical Devices2007Цитирований: 0
    ABI

  12. Optical FET output characteristics research in light-activated mode

    D. M. Yodgorova

    СтатьяSemiconductor Lasers and Optical DevicesRadioelectronics and Communications Systems2008Цитирований: 0
    ABI

  13. Specialities of optical FET with tin-doped junction channel

    D. M. Yodgorova

    СтатьяPhotonic and Optical DevicesRadioelectronics and Communications Systems2008Цитирований: 0
    ABI

  14. Monolithic InP 16-QAM Modulator

    C.R. Doerr, Peter J. Winzer, Liming Zhang +2

    СтатьяPhotonic and Optical Devices2008Цитирований: 0
    ABI

  15. Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

    L. I. Burov, A. S. Gorbatsevich, M. Jadan +2

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Applied Spectroscopy2011Цитирований: 0
    ABI

  16. Three-barrier photodiode structures with joining of adjacent, barriers

    O. A. Abdulkhaev, Eh.N. Yakubov, G. O. Kamanova

    СтатьяPhotonic and Optical Devices2013Цитирований: 0
    ABI

  17. Spectra of interband absorption and optical gap of amorphous semiconductors

    S. Zaynobidinov, Р. Г. Икрамов, R. M. Jalalov +2

    СтатьяSemiconductor Lasers and Optical DevicesUzbekiston Fizika Zhurnali2013Цитирований: 0
    ABI

  18. Erratum to the article “Effect of Prior Structural Defects in Quartz Fiber Lightguides on Defect Formation by γ Radiation,” by N. Akchurin, M. Kh. Ashurov, M. I. Baidzhanov, Zh. D. Ibragimov, I. R. Rustamov, E. M. Gasanov, I. Nuritdinov, and B. S. Yuldashev, Vol. 104, No. 1, pp. 33–37, January, 2008.

    N. Akchurin, М. Х. Ашуров, Maksudbek Baydjanov +5

    ДругоеSemiconductor Lasers and Optical DevicesAtomic Energy2013Цитирований: 0
    ABI

  19. Holographic planar lightwave circuit for on-chip spectroscopy

    Giuseppe C. Calafiore, Alexander Koshelev, Scott Dhuey +6

    СтатьяPhotonic and Optical DevicesLight Science & Applications2014Цитирований: 0
    ABI

  20. SURVEY OF THE PROBLEMS AND SOLUTIONS OF ARRAYED WAVEGUIDE GRATINGS USED IN THE OPTICAL NETWORKS

    A. G. Abdullaev, Ján Turán

    СтатьяPhotonic and Optical DevicesActa Electrotechnica et Informatica2014Цитирований: 0
    ABI

  21. Influence of the radius of the quantum dot and the nonquilibrium degree on the conversion efficiency of light emitting diodes

    Х. Б. Ашуров, M. M. Adilov, С. Е. Максимов +1

    СтатьяSemiconductor Quantum Structures and DevicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0
    ABI

  22. Method of calculating the distribution of light in a plane parallel to the light guide plate control devices

    Zafar Khakimov Tulaganovich, Baxtiyor Rakhimov Nematovich, Botirjon Alimjanov Abdulmaksud Ugli

    СтатьяSemiconductor Lasers and Optical Devices2016Цитирований: 0
    ABI

  23. Free space optical data link for aircraft parameters remote control

    Ruslan Zakirov

    СтатьяOptical Wireless Communication Technologies2016Цитирований: 0
    ABI

  24. PROSPECTS OF RARE EARTH ELEMENTS TO CREATE A NEW GENERATION OPTICAL AMPLIFIERS

    Makhbuba Odilovna Sultonova

    СтатьяSemiconductor Lasers and Optical DevicesAsian Journal of research2017Цитирований: 0
    ABI

  25. Optoelectronic Sensor Solid Surface Color Analyzer

    Radjabov Telman

    СтатьяSensor Technology and Measurement SystemsJournal of Biomaterials2018Цитирований: 0
    ABI