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Semiconductor Lasers and Optical Devices

Работ: 110

  1. Direct extreme monitoring method for narrow band interference filter coating

    Shan Yin

    СтатьяAdvanced Fiber Optic Sensors1983Цитирований: 0
    ABI

  2. Spatial instabilities and symmetry breaking effects in lasers

    L. M. Narducci, G.-L. Oppo, J. R. Tredicce +1

    СтатьяAdvanced Fiber Laser TechnologiesAnnual Meeting Optical Society of America1989Цитирований: 0
    ABI

  3. Multichannel interference light filters

    A. I. Belyaeva, V. I. Goncharenko, A. P. Silka +1

    СтатьяOptical Polarization and EllipsometryJournal of Applied Spectroscopy1990Цитирований: 0
    ABI

  4. Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

    N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskiĭ +4

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  5. Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0
    ABI

  6. Polarization switching time for semiconductor laser radiation

    G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  7. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  8. 1.94-μm light-emitting diodes for moisture-content measurements

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  9. Power characteristics of 2.2 μm LEDs for spectroscopic applications

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  10. ActiveX control for a semiconductor plate in a waveguide

    E. O. Popov, S. O. Popov

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  11. Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

    E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  12. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  13. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  14. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  15. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  16. Multiwell laser heterostructures fabricated by liquid-phase epitaxy

    A. Yu. Leshko, A. V. Lyutetskiĭ, A. V. Murashova +7

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  17. Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy

    A. D. Bondarev, D. A. Vinokurov, V. A. Kapitonov +3

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  18. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  19. Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

    T. N. Danilova, O. I. Evseenko, A. N. Imenkov +4

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  20. Excitonic waveguiding and lasing in wide bandgap semiconductor

    N. N. Ledentsov

    СтатьяSemiconductor Quantum Structures and DevicesPhysics of the Solid State1998Цитирований: 0
    ABI

  21. Modulation of the polarization of semiconductor laser radiation at constant output power

    G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  22. Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber

    A. E. Gubenko, G. Venus, I. M. Gadzhiev +1

    СтатьяOptical Network TechnologiesTechnical Physics Letters1999Цитирований: 0
    ABI

  23. AlGaAsSb lasers emitting in the 1.6 μm region

    T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov +2

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1999Цитирований: 0
    ABI

  24. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

    L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1999Цитирований: 0
    ABI

  25. Growth of Ge1−xSnnx solid solutions from the liquid phase

    A. Sh. Razzakov

    СтатьяPhotonic and Optical DevicesDoklady Physics2001Цитирований: 0
    ABI