Computer Simulation of Current–Voltage Characteristics in Amorphous Silicon p–n Diode Structures under Impurity Photoexcitation
S. A. AzimovInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentP. M. Karageoegy-AlkalaevInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentA. Yu. LeĭdermanInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentV. S. RubinInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, Tashkent
ABI
Аннотация
A computer simulation of the space-charge generation-recombination currents in a-Si:H arid a-Si:F diode structures under impurity photoexcitation is carried out. The gap state distribution function experimentally determined in a-Si:H and a-Si:F is immediately used in the calculations. It is shown that the application of the “U” as well as of the “shifted U” gap state distribution function leads to a appreciable underestimation of dark generation-recombination currents as well as to a considerable overestimation of the photovoltaic performance of the structure. [Russian Text Ignored].
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