Работы, цитирующие эту работу

Работ: 3

Работа: Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

1. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000319

2. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000333

3. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

   I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

   СтатьяSilicon Effects in AgricultureComputational Materials Science2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000363