Работы, цитирующие эту работу

Работ: 4

Работа: Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

1. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

   T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

   СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.199247

2. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

   T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

   СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.614844

3. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

   T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

   СтатьяSemiconductor materials and interfacesSemiconductors2015Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.408797

4. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

   T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

   СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.625774