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Работы, на которые ссылается эта работа

Работ: 13

Работа: Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

  1. Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

    M. K. Herndon, Anju Gupta, V. Kaydanov +1

    Статья1999Цитирований: 16
    ABI

  2. Double-injection currents in semiconductors

    É. I. Adirovich, P. M. Karageorgii-Alkalaev, A. Iu. Leiderman

    Статья1978Цитирований: 14
    ABI

  3. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
    ABI

  4. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Статья1978Цитирований: 12
    ABI

  5. Optical Energy Gap of the Mixed Crystal CdS<sub><i>x</i></sub>Te<sub>1-<i>x</i></sub>

    Keiichi Ohata, Junji Saraie, Tetsuro Tanaka

    Статья1973Цитирований: 10
    ABI

  6. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
    ABI

  7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2010Цитирований: 8
    ABI

  8. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
    ABI

  9. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  10. FUNDAMENTAL AND APPLIED PROBLEMS OF PHYSICS

    В. Г. Халтурин

    Статья2006Цитирований: 7
    ABI

  11. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 6
    ABI

  12. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1981Цитирований: 3
    ABI

  13. Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

    A.S. Saidov, A. Yu. Leĭderman, Б. Сапаев +2

    Статья1996Цитирований: 2
    ABI