Работы, цитирующие эту работу

Работ: 2

Работа: The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

1. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004230

2. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018