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Работы, на которые ссылается эта работа

Работ: 15

Работа: Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

  1. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 16
    ABI

  3. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14
    ABI

  4. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  5. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5
    ABI

  6. Analysis of structural defects in the CdSe x S1 – x nanocrystals

    P. G. Petrosyan, L. N. Grigoryan

    Статья2017Цитирований: 4
    ABI

  7. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    СтатьяSemiconductor materials and interfacesTechnical Physics2015Цитирований: 3
    ABI

  8. Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Eshboy Rabbimov +2

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2019Цитирований: 3
    ABI

  9. Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

    S. V. Stetsyura, E. G. Glukhovskoy, A. V. Kozlowski +1

    Статья2015Цитирований: 3
    ABI

  10. Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

    R.A. Redko, S. I. Budzulyak, D. V. Korbutyak +9

    Статья2015Цитирований: 2
    ABI

  11. Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection

    Warren C. W. Chan, Shuming Nie

    Статья1998Цитирований: 2
    ABI

  12. Без названия

    ДругоеЦитирований: 1
    ABI

  13. Без названия

    ДругоеЦитирований: 1
    ABI

  14. Без названия

    ДругоеЦитирований: 1
    ABI

  15. Без названия

    ДругоеЦитирований: 1
    ABI