Работы, цитирующие эту работу

Работ: 2

Работа: Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

1. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

   А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

   СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.005519

2. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

   СтатьяSilicon Nanostructures and PhotoluminescenceVacuum2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.008005