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Работы, на которые ссылается эта работа

Работ: 14

Работа: Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

  1. Slowing down the corrosion of metal structures using polymeric materials

    Fayzulla Nurkulov, Umida Ziyamukhamedova, Erkin Rakhmatov +1

    СтатьяMaterial Properties and ApplicationsE3S Web of Conferences2021Цитирований: 28
    ABI

  2. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  4. Mathematical Modeling of Rheological Properties During Structure Formation of Heterocomposite Potting Materials and Coatings and Their Application

    Gavkhar Miradullaeva, Erkin Rakhmatov, Otabek Bozorov +2

    ГлаваEngineering and Agricultural InnovationsLecture notes in civil engineering2021Цитирований: 21
    ABI

  5. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  6. Features of structural adaptability of polymer composite coatings

    Umida Ziyamukhamedova, Alijon Djumabaev, Bakhtiyor Urinov +1

    СтатьяAdvanced Theoretical and Applied Studies in Material Sciences and GeometryE3S Web of Conferences2021Цитирований: 17
    ABI

  7. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  8. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2017Цитирований: 14
    ABI

  9. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  10. An ion track based approach to nano- and micro-electronics

    K. Hoppe, W. R. Fahrner, D. Fink +7

    Статья2008Цитирований: 9
    ABI

  11. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

    Shinji Takeoka, Minoru Fujii, Shinji Hayashi

    Статья2000Цитирований: 7
    ABI

  12. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Статья2000Цитирований: 4
    ABI

  13. Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

    N. Lieske, Rudolf Hezel

    Статья1981Цитирований: 3
    ABI

  14. Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

    M. Hamasaki, T. Adachi, S. Wakayama +1

    Статья1978Цитирований: 2
    ABI