Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseскороОткрытый API экосистемы
Латиница
← Назад к работе

Работы, на которые ссылается эта работа

Работ: 16

Работа: On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

  1. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  2. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    СтатьяSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 13
    ABI

  3. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2019Цитирований: 12
    ABI

  4. Photoelectron Si 2p spectra of ultrathin CoSi2 layers formed on Si(100)2×1

    M. V. Gomoyunova, I. I. Pronin, N. R. Gall +2

    Статья2003Цитирований: 9
    ABI

  5. Laser Recrystallization and 3D Integration

    J.-P. Colinge

    Статья1984Цитирований: 6
    ABI

  6. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

    Aleksandr Alekseev, D.A. Olyanich, T.V. Utas +3

    Статья2015Цитирований: 6
    ABI

  7. Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Статья2011Цитирований: 5
    ABI

  8. Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

    Ki-jeong Kim, Tai‐Hee Kang, Kwang-woo Kim +2

    Статья2000Цитирований: 5
    ABI

  9. Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

    Ulrich Starke, J. Schardt, W. Weiß +3

    Статья1998Цитирований: 4
    ABI

  10. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Статья2006Цитирований: 4
    ABI

  11. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  12. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    СтатьяSurface and Thin Film PhenomenaTechnical Physics2019Цитирований: 3
    ABI

  13. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    Daichi Tsukahara, Masako Baba, Syuta Honda +6

    Статья2014Цитирований: 3
    ABI

  14. Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

    Mohammad W. Ullah, A. Kuronen, K. Nordlund +4

    Статья2013Цитирований: 2
    ABI

  15. Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

    M. Ajmal Khan, T. Saito, Kotaro Nakamura +5

    Статья2012Цитирований: 2
    ABI

  16. Без названия

    ДругоеЦитирований: 1
    ABI