Работы, на которые ссылается эта работа

Работ: 8

Работа: Obtaining new types of compounds between silicon and cadmium sulfide

Injection photodiode based on an n-CdS/p-CdTe heterostructure
Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov
СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2013Цитирований: 19
ABI
Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов
СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
ABI
I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1
СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
ABI
On the theory of sublinear current-voltage characteristics of semiconductor structures
A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev
Статья1978Цитирований: 12
ABI
Injection-based photodetectors
І. М. Викулин, Ш. Д. Курмашев, V. I. Stafeev
Статья2008Цитирований: 11
ABI
Injection photodiode based on p-CdTe film
Ш. А. Мирсагатов, A.K. Uteniyazov
СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11
ABI
Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure
A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2
СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8
ABI
Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate
Ken Takahashi, Shigeki Yamada, Ryuichi Nakazono +4
Статья1998Цитирований: 2
ABI