Работы, на которые ссылается эта работа

Работ: 8

Работа: STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

Raman spectroscopy of silicon, doped with platinum and irradiated by protons
Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1
СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 9
ABI
Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure
N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova
СтатьяSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics2021Цитирований: 8
ABI
Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si
N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova
Статья2023Цитирований: 7
ABI
PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS
Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4
СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4
ABI
Raman spectroscopy of PtSi formation at the Pt/Si(100) interface
J. C. Tsang, Y. Yokota, R. Matz +1
Статья1984Цитирований: 4
ABI
Nuclear instruments and methods in physics research section B: Beam interactions with materials and atoms
E. Punzón-Quijorna
Статья2024Цитирований: 3
ABI
On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Shakhrukh Kh. Daliev, Fayzulla A. Saparov
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 3
ABI
Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties
R. S. Madatov, A. S. Alekperov, F.N. Nurmammadova +2
Статья2024Цитирований: 2
ABI