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Работы, на которые ссылается эта работа

Работ: 21

Работа: A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Статья2011Цитирований: 11
    ABI

  2. Short-channel effects in SOI MOSFETs

    S. Veeraraghavan, J.G. Fossum

    Статья1989Цитирований: 7
    ABI

  3. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
    ABI

  4. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5
    ABI

  5. Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime

    Hafedh Belmabrouk, Houssem Rezgui, Faouzi Nasri +2

    Статья2020Цитирований: 3
    ABI

  6. Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node

    Houssem Rezgui, Faouzi Nasri, Giovanni Nastasi +5

    Статья2020Цитирований: 3
    ABI

  7. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet, Terence B. Hook, P. Montanini +61

    Статья2017Цитирований: 3
    ABI

  8. Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

    Wenhui Zhu, Guangping Zheng, Sen Cao +1

    Статья2018Цитирований: 3
    ABI

  9. Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon, P. Schuddinck, Prasanth Raghavan +5

    Статья2015Цитирований: 2
    ABI

  10. Exploring sub-20nm FinFET design with predictive technology models

    Saurabh Sinha, Greg Yeric, Vikas Chandra +2

    Статья2012Цитирований: 2
    ABI

  11. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon, Yasser Sherazi, P. Schuddinck +14

    Статья2016Цитирований: 2
    ABI

  12. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-<i>k</i> dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

    Ethan A. Scott, John T. Gaskins, Sean W. King +1

    Статья2018Цитирований: 2
    ABI

  13. The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

    Peide D. Ye, T. Ernst, Mukesh Khare

    Статья2019Цитирований: 2
    ABI

  14. Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Статья2022Цитирований: 2
    ABI

  15. Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Статья2023Цитирований: 2
    ABI

  16. Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective

    Sunil Rathore, Rajeewa Kumar Jaisawal, Suneet Kumar Agnihotri +3

    Статья2025Цитирований: 2
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI