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Работы, на которые ссылается эта работа
Работ: 11
Работа: Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1
СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5ABIPhysical origin of negative differential resistance in SOI transistors
Liam McDaid, Steven Hall, Phil Mellor +2
Статья1989Цитирований: 5ABISelf-Consistent Simulation of Heating Effects in Nanoscale Devices
Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva
Статья2009Цитирований: 3ABIImpact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance
Billel Smaani, Neha Paras, Shiromani Balmukund Rahi +3
Статья2023Цитирований: 2ABI